Some radiation effects in II-VI quantum dots

Number 4_Vol.2

AUTHORS: M.B. Sharibaev, Q.A. Ismailov

DOI: 10.29317/ejpfm.2018020407

PAGES: 353 - 359

DATE: 2018-12-24


The effect of electron irradiation (E=0.6-1.8 MeV) on the optical characteristics (photoluminescence, PL) of CdTe/ZnTe structures with quantum dots, QDs, was investigated in the temperature range from 4.2 to 250 K. The data on the influence of irradiation on the temperature dependence of PL intensity, energy position and PL line width, W, from QDs were obtained. The narrowing of PL band and the blue shift of the QD peak position are explained by quenching of the low energy component connected with larger QDs. Aslight decrease in PL intensity for both QDs and the buffer ZnTe layer as well as a sharp drop in PL intensity for 1 ML CdTe quantum wells, QWs, and fragments accompanied by a change in the activation energy of the PL quenching is explained by the radiation defects localized near the QD interface. The obtained results show that under e-beam irradiation QDs are more stable than QWs, which is in agreement with our previous investigations.


CdTe/ZnTe quantum dots, photoluminescence, atomic force microscopy, electron beam irradiation


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