Vol. 2 No 4 was published on December 24, 2018. | 11 articles were submitted, 9 articles were accepted, 2 articles were rejected | Clarivate Analytics | Higher Attestation Commission of Russia | Control Committee in Education and Science of the Republic of Kazakhstan |


Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

Number 4_Vol.2

AUTHORS: I.R. Bekpulatov, A.S. Rysbaev, Sh.Kh. Dzhuraev, A.S. Kasymov

DOI: 10.29317/ejpfm.2018020409

PAGES: 367 - 376

DATE: 2018-12-24


ABSTRACT

In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si gradually decreasing energy. The effect of the subsequent thermal and annealing IR profile on the distribution of the atoms and the characteristics of the temperature sensor was studied.


KEYWORDS

method of high-phase ion implantation, temperature-sensitive elements, sensor, annealing.


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