Influence of Cu+ impurity on the efficiency of creation of electron-hole trapping centers in irradiated Na2SO4 − Cu crystals


Number 3_Vol.5

AUTHORS: T.N. Nurakhmetov, B.N. Yussupbekova, A.M. Zhunusbekov, D.H. Daurenbekov, B.M. Sadykova, K.B. Zhangylyssov, T.T. Alibay, D.A. Tolekov

DOI: 10.32523/ejpfm.2021050305

PAGES: 200 - 208

DATE: 2021-09-22


ABSTRACT

The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 − Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 − Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the recombination processes is transferred to impurities.


KEYWORDS

alkali metal sulfates, electron-hole pairs, glow centers, phosphorescence, recombination emission, impurity, TSL


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