BEKPULATOV, I; RYSBAEV, A.S.; DZHURAEV, Sh.Kh.; KASYMOV, A.S. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111). Eurasian Journal of Physics and Functional Materials, [S. l.], v. 2, n. 4, 2026. Disponível em: https://ephys.kz/index.php/journal/article/view/102. Acesso em: 10 mar. 2026.