I. Bekpulatov, A. Rysbaev, S. Dzhuraev, and A. Kasymov, “Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)”, Eur. J. Phys. Funct. Mater., vol. 2, no. 4, Mar. 2026, Accessed: Mar. 10, 2026. [Online]. Available: https://ephys.kz/index.php/journal/article/view/102