Bekpulatov I, Rysbaev A, Dzhuraev S, Kasymov A. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111). Eur. J. Phys. Funct. Mater. [Internet]. 2026 Mar. 3 [cited 2026 Mar. 10];2(4). Available from: https://ephys.kz/index.php/journal/article/view/102