Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

Authors

  • A. S. Rysbaev Author

Abstract

The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.

Recommended Citation

Rysbaev, A. S.; Bekpulatov, I. R.; Igamov, B. D.; and Juraev, Sh. X. (2019) "Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing," Eurasian Journal of Physics and Functional Materials: Vol. 3: No. 3, Article 7.
DOI: https://doi.org/10.29317/ejpfm.2019030307

References

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Published

2026-03-03

Issue

Vol. 3 No. 3 (2019): Volume 3, Number 3 (2019)

Section

Original Studies

How to Cite

(1)
Rysbaev, A. Change of Electrophysical Properties of the Si(111) and Si(100) Surface in the Process of Ion Implantation and Next Annealing. Eur. J. Phys. Funct. Mater. 2026, 3 (3).