Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

Authors

  • A. S. Rysbaev Author
  • S. U. Irgashev Author
  • A. S. Kasimov Author
  • D. Sh. Juraeva Author
  • J. B. Khujaniyazov Author
  • J.B. Khujaniyazov Author
  • M.I. Khudoyberdieva Author

Abstract

The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.

Recommended Citation

Rysbaev, A. S.; Irgashev, S. U.; Kasimov, A. S.; Juraeva, D. Sh.; Khujaniyazov, J. B.; and Khudoyberdieva, M. I. (2020) "Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides," Eurasian Journal of Physics and Functional Materials: Vol. 4: No. 1, Article 6.
DOI: https://doi.org/10.29317/ejpfm.2020040106

References

Downloads

Published

2026-03-03

Issue

Vol. 4 No. 1 (2020): Volume 4, Number 1 (2020)

Section

Original Studies

How to Cite

(1)
Rysbaev, A.; Irgashev, S. U.; Kasimov, A. S.; Juraeva, D. S.; Khujaniyazov, J. B.; Khujaniyazov, J.; Khudoyberdieva, M. Optimal Technological Modes of Ion Implantation and Following Annealing for Forming Thin Nanosized Films of Silicides. Eur. J. Phys. Funct. Mater. 2026, 4 (1).