Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides
Abstract
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.
Recommended Citation
Rysbaev, A. S.; Irgashev, S. U.; Kasimov, A. S.; Juraeva, D. Sh.; Khujaniyazov, J. B.; and Khudoyberdieva, M. I. (2020) "Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides," Eurasian Journal of Physics and Functional Materials: Vol. 4: No. 1, Article 6.
DOI: https://doi.org/10.29317/ejpfm.2020040106
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