Study of the Hole Behavior Properties of ITO/ZnO/VOPc/MoO3 /Al Devices by Varying the Temperature and Thickness via Impedance Spectroscopy

Abstract

DC and AC electrical characteristics of vanadyl phthalocyanine thin films were arranged in an ITO/MoO₃/VOPc/MoO₃/Al sandwiched structure. By changing the thickness of the VOPc film within the range of 50–400 nm, the electrical properties of the fabricated diode device were examined at different temperatures. Analysis of real and imaginary components revealed insights into the resistance of the film and provided valuable information on the relaxation time. Notably, Cole‒Cole plots demonstrated a correlation between film thickness and enhanced mobility, indicating an increase in film mobility with increasing thickness. This study determined the primary electrical conduction mechanism as a space charge-limited current with an exponential trap distribution. There was a remarkable increase in hole mobility, increasing from 8.25×10^-9 cm²V^-1s^-1 to 1.32×10^-6 cm²V^-1s^-1, corresponding to variations in the VOPc film thickness from 50 nm to 400 nm. Hole mobility was found to increase with increasing temperature, which was attributed to the increased injection of thermally generated charge carriers, along with a reduction in the barrier height.
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Recommended Citation
Ramanna, Madhusudhana; Puttaswamy, Roopadevi; Puttegowda, Ramya; Shivakumar, Sachin; Linganna, Vinaykumar; Ravikiran, Ravikiran; Bandadka, Sachin; and Halligudra, Guddappa (2025) "Study of the Hole Behavior Properties of ITO/ZnO/VOPc/MoO3 /Al Devices by Varying the Temperature and Thickness via Impedance Spectroscopy," Eurasian Journal of Physics and Functional Materials: Vol. 9: No. 4, Article 2.
DOI: https://doi.org/10.69912/2616-8537.1259