Mechanisms of formation of electron hole trap centers in LiKSO4 crystal

Authors

  • T. N. Nurakhmetov Author
  • B.N. Yussupbekova Author
  • K.B. Zhangylyssov Author
  • B.M. Sadykova Author
  • T.T. Alibay Author
  • D. H. Daurenbekov Author
  • A. Zh. Kainarbay Author
  • A. M. Zhunusbekov Author
  • Zh. M. Salikhodzha Author
  • D.A. Tolekov Author

Abstract

The mechanisms of creation of electron-hole trapping centers in LiKSO4 have been investigated by the methods of vacuum and thermal activation spectroscopy. It is shown that electron-hole trapping centers are formed during the trappingof electronsbyanionic complexes and localizationofa holein the lattice in the form of the radical SO. . The appearance of phosphorescence at 3.0-3.1 eV, 2.6-2.7 eV and 2.3-2.4 4 eV confirms the creation of electron-hole trap centers.

Recommended Citation

Nurakhmetov, T. N.; Salikhodzha, Zh. M.; Zhunusbekov, A. M.; Kainarbay, A. Zh.; Daurenbekov, D. H.; Alibay, T. T.; Sadykova, B. M.; Zhangylyssov, K. B.; Yussupbekova, B. N.; and Tolekov, D. A. (2021) "Mechanisms of formation of electron hole trap centers in LiKSO4 crystal," Eurasian Journal of Physics and Functional Materials: Vol. 5: No. 1, Article 3.
DOI: https://doi.org/10.32523/ejpfm.2021050103

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Published

2026-03-04

Issue

Vol. 5 No. 1 (2021): Volume 5, Number 1 (2021)

Section

Original Research Articles

License

The Eurasian Journal of Physics and Functional Materials is an open-access journal. Articles published under the Creative Commons Attribution 4.0 International License (CC BY 4.0) may be shared, redistributed, and adapted, including for commercial purposes, provided that the terms of the license are followed, including appropriate attribution to the original authors and source.

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How to Cite

(1)
Nurakhmetov, T.; Yussupbekova, B.; Zhangylyssov, K.; Sadykova, B.; Alibay, T.; Daurenbekov, D. H.; Kainarbay, A. Z.; Zhunusbekov, A. M.; Zh. M. Salikhodzha, Z. M. S.; Tolekov, D. Mechanisms of Formation of Electron Hole Trap Centers in LiKSO4 Crystal. Eur. J. Phys. Funct. Mater. 2026, 5 (1).