Influence of Cu+ impurity on the efficiency of creation of electron hole trapping centers in irradiated Na2SO4-Cu crystals

Authors

  • T. N. Nurakhmetov Author
  • B. N. Yussupbekova Author
  • A. M. Zhunusbekov Author
  • D. H. Daurenbekov Author
  • B. M. Sadykova Author
  • K.B. Zhangylyssov Author
  • T.T. Alibay Author

Abstract

The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 . Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 . Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the re combination processes is transferred to impurities.

Recommended Citation

Nurakhmetov, T. N.; Yussupbekova, B. N.; Zhunusbekov, A. M.; Daurenbekov, D. H.; Sadykova, B. M.; Zhangylyssov, K. B.; Alibay, T. T.; and Tolekov, D. A. (2021) "Influence of Cu+ impurity on the efficiency of creation of electron hole trapping centers in irradiated Na2SO4-Cu crystals," Eurasian Journal of Physics and Functional Materials: Vol. 5: No. 3, Article 5.
DOI: https://doi.org/10.32523/ejpfm.2021050305

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Published

2026-03-04

Issue

Vol. 5 No. 3 (2021): Volume 5, Number 3 (2021)

Section

Original Studies

How to Cite

(1)
Nurakhmetov, T.; Yussupbekova, B. N.; Zhunusbekov, A. M.; Daurenbekov, D. H.; Sadykova, B. M.; Zhangylyssov, K.; Alibay, T. Influence of Cu+ Impurity on the Efficiency of Creation of Electron Hole Trapping Centers in Irradiated Na2SO4-Cu Crystals. Eur. J. Phys. Funct. Mater. 2026, 5 (3).