Mechanisms for the creation of intrinsic electron-hole trapping centers in a CaSO4 crystal

Authors

  • T. N. Nurakhmetov Author
  • K. B. Zhangylyssov Author
  • A. M. Zhunusbekov Author
  • D. H. Daurenbekov Author
  • T. T. Alibay Author
  • B.M. Sadykova Author
  • B.N. Yussupbekova Author
  • D.A. Tolekov Author

Abstract

The mechanism of creation of electron-hole trapping centers in CaSO4 at 15-300 K was investigated by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. It is shown that electron-hole trapping centers are formed upon trap of electrons in the anionic complexes SO2. and localization 4 of holes in the form of SO. radical. Based on the measurement of the spectrum of excitation of 4 long-wavelength recombination emission at 3.0-3.1 eV and 2.7 eV, the energy distance of the formed electron-hole trapping centers was estimated (4.43 eV and 3.87 eV).

Recommended Citation

Nurakhmetov, T. N.; Zhangylyssov, K. B.; Zhunusbekov, A. M.; Daurenbekov, D. H.; Alibay, T. T.; Sadykova, B. M.; Yussupbekova, B. N.; and Tolekov, D. A. (2021) "Mechanisms for the creation of intrinsic electron-hole trapping centers in a CaSO4 crystal," Eurasian Journal of Physics and Functional Materials: Vol. 5: No. 3, Article 8.
DOI: https://doi.org/10.32523/ejpfm.2021050308

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Published

2026-03-04

Issue

Vol. 5 No. 3 (2021): Volume 5, Number 3 (2021)

Section

Original Studies

How to Cite

(1)
Nurakhmetov, T.; Zhangylyssov, K. B.; Zhunusbekov, A. M.; Daurenbekov, D. H.; Alibay, T. T.; Sadykova, B.; Yussupbekova, B.; Tolekov, D. Mechanisms for the Creation of Intrinsic Electron-Hole Trapping Centers in a CaSO4 Crystal. Eur. J. Phys. Funct. Mater. 2026, 5 (3).