RYSBAEV, A; BEKPULATOV, I.R.; IGAMOV, B.D.; JURAEV, Sh.X. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing. Eurasian Journal of Physics and Functional Materials, [S. l.], v. 3, n. 3, 2026. Disponível em: https://ephys.kz/index.php/journal/article/view/133. Acesso em: 20 apr. 2026.